2008-07-10 rev 1.4 page 1 SPP08P06P g sipmos power-transistor features p-channel enhancement mode avalanche rated d v /d t rated 175c operating temperature product summary drain source voltage v v ds -60 drain-source on-state resistance r ds(on) 0.3 w continuous drain current a i d -8.8 type package SPP08P06P pg-to220-3 pin 1 pin 2/4 pin 3 g d s maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol unit value -8.8 -6.2 continuous drain current t c = 25 c t c = 100 c a i d pulsed drain current t c = 25 c i d puls -35.2 avalanche energy, single pulse i d = -8.8 a , v dd = -25 v, r gs = 25 w 70 mj e as avalanche energy, periodic limited by t jmax e ar 4.2 d v /d t 6 reverse diode d v /d t i s = -8.8 a, v ds = -48 , d i /d t = 200 a/s, t jmax = 175 c kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 42 w operating and storage temperature t j , t stg -55...+175 c iec climatic category; din iec 68-1 55/175/56
2008-07-10 rev 1.4 page 2 SPP08P06P g thermal characteristics parameter symbol unit values min. max. typ. characteristics r thjc - 3.6 - thermal resistance, junction - case k/w - 62 r thja thermal resistance, junction - ambient, leaded - smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -250 a v (br)dss -60 - v - gate threshold voltage, v gs = v ds i d = -250 a, t j = 25 c -2.1 -3 -4 v gs(th) zero gate voltage drain current v ds = -60 v, v gs = 0 v, t j = 25 c v ds = -60 v, v gs = 0 v, t j = 150 c a -1 -100 i dss -0.1 -10 - - i gss - -10 -100 gate-source leakage current v gs = -20 v, v ds = 0 v na drain-source on-state resistance v gs = -10 v, i d = -6.2 a r ds(on) - 0.23 0.3 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2008-07-10 rev 1.4 page 3 SPP08P06P g electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = -6.2 a 1.5 g fs s - 3.6 input capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c iss 335 420 pf - c oss - 135 105 output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz reverse transfer capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz 95 65 c rss - turn-on delay time v dd = -30 v, v gs = -10 v, i d = -6.2 a, r g = 6 w - 24 ns 16 t d(on) rise time v dd = -30 v, v gs = -10 v, i d = -6.2 a, r g = 6 w t r - 69 46 48 72 t d(off) turn-off delay time v dd = -30 v, v gs = -10 v, i d = -6.2 a, r g = 6 w - fall time v dd = -30 v, v gs = -10 v, i d = -6.2 a, r g = 6 w t f - 14 21
2008-07-10 rev 1.4 page 4 SPP08P06P g electrical characteristics, at t j = 25 c, unless otherwise specified unit values symbol parameter min. typ. max. dynamic characteristics gate to source charge v dd = -48 , i d = -8.8 a - q gs nc 2.1 1.4 gate to drain charge v dd = -48 v, i d = -8.8 a q gd 4 6 - 15 - q g gate charge total v dd = -48 v, i d = -8.8 a, v gs = 0 to -10 v 10 gate plateau voltage v dd = -48 , i d = -8.8 a v (plateau) - -3.85 - v parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - -8.8 a inverse diode direct current,pulsed t c = 25 c i sm - - -35.2 inverse diode forward voltage v gs = 0 v, i f = -8.8 a v sd - -1.17 -1.55 v reverse recovery time v r = -30 v, i f = i s , d i f /d t = 100 a/s t rr - 60 90 ns reverse recovery charge v r = -30 v, i f = l s , d i f /d t = 100 a/s q rr - 100 150 nc
2008-07-10 rev 1.4 page 5 SPP08P06P g drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 SPP08P06P i d power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 5 10 15 20 25 30 35 40 w 50 SPP08P06P p tot transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPP08P06P z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -1 -10 0 -10 1 -10 2 -10 a SPP08P06P i d r d s ( o n ) = v ds / i d dc 10 ms 1 ms 100 s t p = 12.0 s
2008-07-10 rev 1.4 page 6 SPP08P06P g typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 -2 -4 -6 -8 -10 -12 -14 a -18 i d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 w 1.0 SPP08P06P r ds(on) a v gs [v] = a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -10.0 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 -2 -4 -6 -8 v -11 v ds 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 a -21 SPP08P06P i d v gs [v] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j p tot = 42.00 w j -10.0 typ. transfer characteristics i d = f ( v gs ) v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 -1 -2 -3 -4 -5 -6 -7 -8 v -10 v gs 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 a -30 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 -2 -4 -6 -8 -10 -12 -14 -16 a -20 i d 0 1 2 3 4 s 6 g fs
2008-07-10 rev 1.4 page 7 SPP08P06P g drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = -6.2 a, v gs = -10 v -60 -20 20 60 100 140 c 200 t j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 w 1.0 SPP08P06P r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -250 a -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 2% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 98% -60 -20 20 60 100 c 180 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds 1 10 2 10 3 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd -1 -10 0 -10 1 -10 2 -10 a SPP08P06P i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2008-07-10 rev 1..4 page 8 SPP08P06P g avalanche energy e as = f ( t j ) para.: i d = -8.8 a , v dd = -25 v, r gs = 25 w 25 45 65 85 105 125 145 c 185 t j 0 10 20 30 40 50 60 mj 80 e as typ. gate charge v gs = f ( q gate ) parameter: i d = -8.8 a pulsed 0 2 4 6 8 10 12 nc 15 q gate 0 -2 -4 -6 -8 -10 -12 v -16 SPP08P06P v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 c 200 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 SPP08P06P v (br)dss
2008-07-10 rev 1.4 page 9 published b y infineon te c hnologies ag 8172 6 munic h, german y ? 2008 infin e on tech nol ogies ag all rights reserv e d. legal disclai mer the inform ation given in th is do cume nt shall in n o event be reg a rd ed as a g uara n tee of con d itions or ch aracte ristics. with respect to any e x amples o r hi nts given he rein, any typical values stated herei n and/o r any informati on reg a rding the appl i c atio n of the device, infineon te chn o logie s here b y disclai m s any and a ll warrantie s and liabilitie s of any kind, inclu d ing without limitation, warra n ties of non-i n frin gem ent of intellect ual prop erty rights of any t h ird pa rty. information for furth e r inf o rmatio n on tech nolo g y, delivery terms and conditio n s and p r ices, plea se conta c t the nearest in fineon te chn o logie s office ( ww w.infine o n.com ). warning s due to techni cal re qui reme nts, com pone nts may co ntain dan gerou s su bsta nces. for inform ation on the types i n que stion, pl ease co ntact t he nearest in fineon te chn o logie s office . infineon tech nolo gie s compo nent s may be use d in life-su ppo rt device s or sy stem s only wi th the express written ap pro v al of infineon tech nolo g i e s, if a failure of such com pone nts can reasona bly be expecte d to cause the failu re of that life-sup port device or s y s t em or to affec t the s a fety or effectivene ss of that device or system. li fe supp ort de vices o r sy ste m s are intend ed to be implanted in t he huma n bo dy or to supp ort and/o r ma intain and su stain an d/or p r otect h u man life. if they fail, it is rea s o nabl e to assume th at the health of the use r or other pe rson s may be enda nge red. SPP08P06P g
|
